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| Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.20.2 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 7.50.2 s Features q q q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings -60 -80 -60 -80 -5 -8 -4 40 2 150 -55 to +150 Unit V 16.70.3 3.10.1 14.00.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB950 2SB950A 2SB950 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 4.0 1.40.1 1.30.2 Solder Dip 0.5 -0.1 0.80.1 +0.2 2.540.25 5.080.5 1 2 emitter voltage 2SB950A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C B 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) 3 Internal Connection C s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB950 2SB950A 2SB950 2SB950A 2SB950 2SB950A E (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat)1 VCE(sat)2 fT ton tstg tf * Conditions VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCE = -30V, IB = 0 VCE = -40V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -3V, IC = - 0.5A VCE = -3V, IC = -3A VCE = -3V, IC = -3A IC = -3A, IB = -12mA IC = -5A, IB = -20mA VCE = -10V, IC = - 0.5A, f = 1MHz IC = -3A, IB1 = -12mA, IB2 = 12mA, VCC = -50V min typ max -200 -200 -500 -500 -2 Unit A A mA V -60 -80 1000 2000 10000 -2.5 -2 -4 20 0.3 2 0.5 Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 V V V MHz s s s Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistors PC -- Ta 50 -6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C -5 IB=-3.0mA -2.5mA -2.0mA -1.5mA -1.0mA - 0.5mA -3 - 0.4mA - 0.3mA - 0.2mA -1 2SB950, 2SB950A IC -- VCE -10 VCE=-3V IC -- VBE Collector power dissipation PC (W) Collector current IC (A) -4 Collector current IC (A) 40 -8 30 -6 TC=100C -4 25C -25C (1) 20 -2 10 (3) (4) 0 0 20 40 60 (2) -2 0 80 100 120 140 160 0 -1 -2 -3 -4 -5 0 0 - 0.8 -1.6 -2.4 -3.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=250 -30 -10 -3 -1 TC=100C 25C -25C 106 hFE -- IC 10000 Cob -- VCB Collector output capacitance Cob (pF) VCE=-3V IE=0 f=1MHz TC=25C Forward current transfer ratio hFE 3000 1000 300 100 30 10 3 1 - 0.1 - 0.3 105 TC=100C 104 25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -25C 103 102 -1 -3 -10 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) -100 -30 103 Non repetitive pulse TC=25C ICP IC t=1ms 10ms DC Rth(t) -- t (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 -10 -3 -1 10 (2) - 0.3 - 0.1 - 0.03 - 0.01 -1 1 2SB950A 10-1 2SB950 -3 -10 -30 -100 -300 -1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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